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| TENTATIVE + TPCM8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCM8001-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications 0.5 Unit: mm 0.8 8 0.25 5 Portable Equipment Applications * * * * * * * Small footprint due to small and thin package High speed switching Low drain-source ON resistance: RDS (ON) = 7 mO (typ.) High forward transfer admittance: |Yfs | =36 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.750.05 4.65 3.65 Small gate charge: Q g =19 nC (typ.) 1 3.9MAX 3.5 4 0.55 1 4 Drain-source voltage Drain-gate voltage (RGS = 20 k ) Gate-source voltage Drain current DC (Note 1) V DSS V DGR V GSS ID IDP PD PD 30 30 20 20 60 TBD TBD V V V A W 1,2,3*F SOURCE 5,6,7,8*F DRAIN 4*F GATE JEDEC JEITA TOSHIBA Weight: g (typ.) ? ? Pulsed (Note 1) Drain power dissipation Drain power dissipation (Tc=25*Z ) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25*Z (Note 4) ) Channel temperature Storage temperature range W PD TBD W Circuit Configuration E AS IAR E AR T ch T stg TBD TBD TBD 150 -55 to 150 mJ 8 A mJ C C 7 6 1 2 3 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2004-08-18 0.8 Characteristics Symbol Rating Unit 8 5 2.2 Maximum Ratings (Ta = 25C) 0.6 2.7 1.05 0.156 5 4 TENTATIVE Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25*Z ) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max TBD Unit C/W TPCM8001-H Rth (ch-a) TBD C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) TBD C/W Marking (Note 5) Type *| Lot No. Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: V DD = 24 V*C Tch = 25C (initial)*CL = mH*C RG = 25 IAR = A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low -order digits of calendar year) 2 2004-08-18 TENTATIVE Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn -ON time Switching time Fall time Turn -OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW V DD 24 V, V GS = 10 V, ID = 20 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX V th RDS (ON) |Yfs | Ciss Crss Coss tr ton V GS 10 V 0V 4.7 V DS = 10 V, V GS = 0 V, f = 1 MHz Test Condition V GS = 16 V, V DS = 0 V V DS = 30 V, V GS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V V DS = 10 V, I D = 1 mA V GS = 4.5 V , ID = 10 A V GS = 10 V , ID = 10 A V DS = 10 V, ID = 10 A Min 30 15 1.1 18 TPCM8001-H Typ. 10 7 36 1130 120 480 2.5 9 3 19 19 11 3.9 4.0 6.0 Max 10 10 2.3 14 9.5 Unit A A V V m S pF ID = 10A V OUT RL = 1.5 ns nC Duty < 1%, tw = 10 s = V DD 15 V - V DD 24 V, V GS = 10 V, ID = 20 A - V DD 24 V, V GS = 5 V, ID = 20 A - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP V DSF Test Condition IDR = 20 A, VGS = 0 V Min Typ. Max 60 -1.2 Unit A V 3 2004-08-18 TENTATIVE TPCM8001-H RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system and to avoid situations in which a malfunction or failure of , such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (" Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-08-18 |
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